Method of manufacturing glass substrate for magnetic recording media

ABSTRACT

The invention provides a method of manufacturing a glass substrate for magnetic recording media. And the glass substrate has high surface smoothness and little waviness. In the primary, secondary and tertiary lapping process, diamond pads  20 A,  20 B, and  20 C are used, respectively. The diamond pad  20 A has an average diamond grain size of 4 to 12 μm, and a content of diamond grains of 5 to 70% by volume. The diamond pad 20B has an average diamond grain size of 1 to 5 μm, and a content of diamond grains of 5 to 80% by volume. The diamond pad  20 C has an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains of 5 to 80% by volume. In the polishing process, the silicon oxide is used as abrasive without using cerium oxide, and before the polishing process, an etching process is provided.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority of Japanese Patent Application No. 2010-237824 filed Oct. 22, 2010, the content of which is incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is related to a method of manufacturing a glass substrate for magnetic recording media.

2. Background Art

The magnetic recording media used for a hard disk drive (HDD) have significantly improved in recording density. Since the introduction of MR heads and of PRML technology, the areal recording density has further increased. Moreover, since the introduction of GMR heads or TMR heads, the areal recording density has continued to increase at a rate of about 1.5 times a year. However, in the future a higher lever of areal recording density will be required.

In addition, with the improvement in recording density of such magnetic recording media, there are growing demands for a substrate used for the magnetic recording media. As a substrate for magnetic recording media, an aluminum substrate and a glass substrate are used conventionally. Of these, generally a glass substrate can be superior to aluminum alloy substrate in hardness, surface smoothness, rigidity, and impact resistance. Therefore, a glass substrate has attracted growing attention as a substrate for magnetic recording media because it is expected to achieve a high recording density.

When manufacturing a glass substrate for magnetic recording media, a disk-shaped glass substrate can be obtained by cutting a large plate-shaped glass plate to a disk-shaped substrate or by press-molding molten glass directly on to the disk-shaped glass substrate using a mold. For surfaces and end faces of the obtained glass substrate, a lapping (grinding) process and polishing process are carried out.

In addition, as a conventional method of manufacturing a glass substrate for magnetic recording media, a primary lapping process, secondary lapping process, primary polishing process, and secondary polishing process of a principal surface of a glass substrate are performed in this order. During these processes, a lapping process and polishing process on the inner and outer peripheral end faces of the substrate were performed.

On the principal surface of the glass substrate, in the primary lapping process, a diamond grindstone was used, in the second lapping process, a diamond grindstone having a smaller grain size than that used in the primary lapping process was used, in the primary polishing process, cerium oxide slurry was used, and in the secondary polishing process, a cerium oxide slurry having a particle size smaller than that in the primary polishing process was used.

In addition, regarding prior art documents relating to the present invention, for example, in Patent Literature 1, it is disclosed that when the primary lapping process using diamond pellets such as resin, metal and vitrified, and then the secondary lapping process using a diamond pad were performed, a substrate having surface smoothness and no defects such as scratches or grinding traces or aspiration traces can be manufactured, and it is also possible to decrease the process time.

Patent literature 1: JP Patent No. 4,049,510.

SUMMARY OF THE INVENTION

However, with the recent development of low magnetic head flying height, it is required to improve waviness of the glass substrate of magnetic recording media and surface roughness. Studies have revealed that although the primary lapping process has a grinding allowance of 100 to 300 μm per side, the glass substrate could become damaged in this primary lapping process. As a result, the surface of the magnetic recording medium in the final product has a long-term waviness.

In addition, polishing the glass substrate using cerium oxide chemical mechanical polishing (CMP) has become a general technology. However, cerium oxide is expensive; thus a technology requiring no, or very little, cerium oxide is preferable.

In view of such conventional circumstances, the object of the present invention is to provide a method of manufacturing a glass substrate for magnetic recording media which can produce glass substrates for magnetic recording media with high productivity, wherein the manufactured substrate has high surface smoothness, little waviness and excellent impact strength.

The present invention provides the following:

(1) A method of manufacturing a glass substrate for magnetic recording media, comprising:

a primary lapping process,

a secondary lapping process,

a tertiary lapping process, and

a polishing process,

which are carried out on a surface except for an end face of a glass substrate in this order;

in the primary, secondary and tertiary lapping process, a diamond pad on which diamond abrasive grain was fixed using binder was used, and the surface of the diamond pad has a structure in which plural tile-like projections having a flat top were provided in line;

wherein

the diamond pad used in the primary lapping process has an average diamond grain size of 4 to 12 μm, and a content of diamond grains in the projection of 5 to 70% by volume,

the diamond pad used in the secondary lapping process has an average diamond grain size of 1 to 5 μm, and a content of diamond grains in the projection of 5 to 80% by volume,

the diamond pad used in the tertiary lapping process has an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection of 5 to 80% by volume,

in the polishing process, silicon oxide is used as abrasive, and

a process of carrying out etching treatment is provided before the polishing process.

(2) The method of manufacturing a glass substrate for magnetic recording media according to (1),

wherein the size of the projections of the diamond pad used in the primary, secondary and tertiary lapping process, is 1.5 to 5 mm square with a height 0.2 to 3 mm, and the space between adjacent projections is 0.5 to 3 mm.

(3) A method of manufacturing a glass substrate for magnetic recording media, comprising:

a primary lapping process,

a secondary lapping process, and

a polishing process,

which are carried out on a surface except for an end face of a glass substrate in this order;

in the primary and secondary lapping process, the diamond pad on which diamond abrasive grain was fixed using binder is used, and the surface of the diamond pad has a structure in which plural tile-like projections having a flat top were provided in line;

wherein

the diamond pad used in the primary lapping process has an average diamond grain size of 3 to 10 μm, and a content of diamond grains in the projection of 5 to 70% by volume,

the diamond pad used in the secondary lapping process has an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection of 5 to 80% by volume,

in the polishing process, the silicon oxide is used as abrasive, and

a process of carrying out etching treatment is provided before the polishing process.

(4) The method of manufacturing a glass substrate for magnetic recording media according to (3),

wherein the size of the projections of the diamond pad used in primary, secondary and tertiary lapping process, is 1.5 to 5 mm square with a height 0.2 to 3 mm, and the space between adjacent projections is 0.5 to 3 mm.

(5) The method of manufacturing a glass substrate for magnetic recording media according to any one of (1) to (4), in the polishing process, the silicon oxide is used as abrasive without using cerium oxide.

(6) The method of manufacturing a glass substrate for magnetic recording media according to (1) to (5), wherein the etching treatment was carried out by dipping the glass substrate in an etching solution.

As described above, according to the present invention, a glass substrates for magnetic recording media, which has high surface smoothness and little waviness can be manufactured with high productivity.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view showing lapping operation for explaining the method of manufacturing a glass substrate for magnetic recording media according to the present invention.

FIG. 2A is a plan view showing an enlarged pad surface of diamond pad used in the lapping process.

FIG. 2B is a A-A′ cross-section view showing an enlarged pad surface of diamond pad used in the lapping process.

FIG. 3 is a perspective view showing the inner and outer peripheral end face lapping process for explaining the method of manufacturing a glass substrate for magnetic recording media according to the present invention.

FIG. 4 is a perspective view showing the inner peripheral end face polishing process for explaining the method of manufacturing a glass substrate for magnetic recording media according to the present invention.

FIG. 5 is a perspective view showing the outer peripheral end face polishing process for explaining the method of manufacturing a glass substrate for magnetic recording media according to the present invention.

FIG. 6 is a perspective view showing a principal surface polishing process for explaining the method of manufacturing a glass substrate for magnetic recording media according to the present invention.

FIG. 7 is a perspective view showing another configuration example of a lapping or polishing machine used in the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The following method for manufacturing a glass substrate for magnetic recording media according to the present invention will be described in detail with reference to the drawings.

A glass substrate for magnetic recording media manufactured by the method of the present invention is a disk-shaped glass substrate having a central aperture. A magnetic recording media is formed by laminating a magnetic layer, protective layer and lubricant layer sequentially on the surface of the glass substrate. In addition, in a magnetic recording and reproducing apparatus (an HDD), writing or reading of information is performed for magnetic recording media by attaching a center of the magnetic recording media to an axis of a spindle motor, and making a magnetic head float and travel over the surfaces of the magnetic recording media which is rotated by the spindle motor.

As for the glass substrate for magnetic recording media, for example, SiO₂—Al₂O₃—R₂O-based chemical glass (R represents at least one member selected from alkali metals.), SiO₂—Al₂O₃—Li₂O-based ceramic glass, SiO₂—AlO₃—MgO—TiO₂-based glass ceramics can be used. Among them, SiO₂—Al₂O₃—MgO—CaO—Li₂O—Na₂O—ZrO₂—Y₂O₃—TiO₂—As₂O₃-based strengthened chemical glass, SiO₂—Al₂O₃—Li₂O—Na₂O—ZrO₂—As₂O₃-based strengthened chemical glass, SiO₂—Al₂O₃—MgO—ZnO—Li₂O—P₂O₅—ZrO₂—K₂O—Sb₂O₃-based strengthened chemical glass, SiO₂—Al₂O₃—MgO—CaO—BaO—TiO₂—P₂O₅—As₂O₃-based glass ceramics, SiO₂—Al₂O₃—MgO—CaO—SrO—BaO—TiO₂—ZrO₂—Bi₂O₃—Sb₂O₃-based glass ceramics can be suitably used. Further, for example, lithium silicate, SiO₂-based crystal (quartz, cristobalite, and tridymite), cordierite, enstatite, aluminum magnesium titanate, spinel-based crystal ([Zn, and/or Mg] Al₂O₄, [Mg and/or Zn]₂TiO₄, as well as a solid solution between these two crystals), forsterite, Spodumene, a glass ceramic which includes solid solution crystals thereof as crystal phase can be suitably used as a glass substrate for magnetic recording medium.

In the process of producing glass substrates for this magnetic recording media, firstly, a disk-shaped glass substrate which has a central aperture is obtained by cutting a glass substrate from a big glass plate, or directly pressing a glass substrate from melting glass by using a mold.

Then, lapping (grinding) process and polishing process are carried out on the surfaces except for the end faces (principal surfaces) of the resulting glass substrate. In addition, between these processes, the method may further include a lapping process and polishing process for an inner and outer peripheral end face of the glass substrates. In addition, in the present invention, chamfering the inner and outer peripheral end surfaces of the glass substrates may be carried out in the same lapping process.

As the method of manufacturing a glass substrate for magnetic recording media according to the present invention, when the lapping process is carried out on the both principal surfaces (the surfaces that finally become the recording surfaces of the magnetic recording media) of a glass substrate, a diamond pad to which diamond abrasive grain was fixed with binder is used. The diamond pad is described below. Therefore, according to the present invention, a polishing surface having little waviness, high surface smoothness and little distortion can be obtained.

In addition, microcracks produced in the case may be removed by an etching processing to be described below. As a result, in the final polishing process on both principal surfaces, even if only mechanical polishing is carried out, the glass substrate for magnetic recording media having the same impact strength as that treated by using a conventional method can be obtained.

In other words, as a conventional method of manufacturing a glass substrate for magnetic recording media, chemical-mechanical polishing (CMP) using cerium oxide slurry is performed in polishing process on a principal surface of a glass substrate. When cerium oxide slurry was replaced with silicon oxide slurry during this polishing process, the chemical polishing by CMP becomes insufficient. Thus, as the present invention, the chemical polishing process is replaced with the etching processing, and the microcracks produced in principal surfaces of a glass substrate are removed.

In the case, the polishing process using conventional cerium oxide slurry becomes unnecessary, and, as a result the two-step conventional polishing process can be changed to a one-step polishing process with use of silicon oxide slurry or, alternatively, the polishing process time using cerium oxide slurry can be reduced, and consumption of cerium oxide slurry can be reduced. In addition, as the present invention, since the etching process is carried out before the polishing process, the microcracks produced in both principal surfaces of the glass substrate can be removed. As a result, mechanical strength (impact strength) of the glass substrate can be improved. Therefore, the method of the present invention reduces the cost of polishing a glass substrate for magnetic recording media, and obtains high productivity.

The method of manufacturing a glass substrate for magnetic recording media according to the present invention is described in detail as following, referring to examples of the first and the second embodiments.

Example of First Embodiment

As example of a first embodiment, a primary principal surface lapping process, an inner and outer peripheral end face lapping process, an inner peripheral end face polishing process, an secondary principal surface lapping process, an tertiary principal surface lapping process, an outer peripheral end face polishing process, an principal surface etching processing and an principal surface polishing process are performed in this order.

As the primary principal surface lapping process, a lapping machine 10 as shown in FIG. 1 is used, and a primary lapping process is carried out on the both principal surfaces of the glass substrate W. In other words, this lapping machine 10 includes a pair of upper and lower faceplates 11 and 12, and several sheets of glass substrates are sandwiched between the faceplates 11 and 12 which are rotating in directions opposite to each other, and then both sides of the glass substrates W are lapped by grinding pads installed in the faceplates 11 and 12.

The grinding pad used for the primary lapping process is a diamond pad 20A to which diamond abrasive grain was fixed with binder (bond) as shown in FIGS. 2A and 2B. In addition, the lapping surface 20a has plural tile-like projections having a flat top which are installed in line. In addition, the diamond pad 20A is formed by placing a number of projections 21, which is formed by fixing diamond abrasive grain with binder, on the surface of a substrate material 22.

It is preferable that the size S of the projections 21 of the diamond pad 20A used in primary lapping process be 1.5 to 5 mm square with a height T 0.2 to 3 mm, and the space G between adjacent projections be 0.5 to 3 mm. According to the present invention, by using the diamond pad 20A satisfying the above range, liquid coolant or lapping fluid can reach everywhere equally, and grinding dust can be discharged smoothly from a space of the projection 21 of the lap surface 20 a.

In addition, it is preferable that the diamond pad 20A used in the primary lapping process have an average diamond grain size of 4 to 12 μm, and a content of diamond grains in the projection 21 of 5 to 70% by volume. It is more preferable that the diamond pad 20A have a content of diamond grains of 20 to 60% by volume. This increases cost due to an increase in the process time when the diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain a desired surface roughness when the diamond abrasive grain size and the content exceed the above range. In addition, as a binder of diamond pad 20A, for example, polyurethane resin, phenol-based resin, melamine-based resin, acrylic resin, or the like can be used.

As the inner and outer peripheral end face lapping process, lapping machine 30 as shown in FIG. 3 is used, and lapping process is carried out on the inner peripheral end surface of a central aperture of glass substrate W and outer peripheral end face of the glass substrate W. The lapping machine 30 includes inner peripheral grindstone 31 and outer peripheral grindstone 32. The laminated substrates X is obtained by laminating pieces of glass substrates W in the state that the central apertures are matched each other wherein spacers S are sandwiched. While rotating the laminated substrates X on axis, and inserting an inner peripheral grindstone 31 into a central aperture of glass substrates and putting glass substrates W in a radial direction between outer peripheral grindstone 32 which is placed on the periphery of each glass substrate W, the inner peripheral grindstone 31 and outer peripheral grindstone 32 are rotated in the direction opposite to that of laminated substrates X. At the same time as lapping the inner peripheral end face of the glass substrates W by the inner peripheral grindstone 31, outer peripheral end face of the glass substrates W is lapped by the peripheral grindstone 32.

In addition, since there are waveforms having projection and recess lines alternately in an axial direction on the surface of the inner peripheral grindstone 31 and the outer peripheral grindstone 32, in addition to grinding the inner peripheral end face and the outer peripheral end face of glass substrates W, it is possible to chamfer the edge portion (chamfer surface) between the two principal surfaces and inner and outer peripheral end face of glass substrates W, by one step or two steps (primary or secondary lapping process).

The inner peripheral grindstone 31 and the outer peripheral grindstone 32 are obtained by fixing diamond abrasive grain with binder. As binder, metal such as copper, copper alloy, nickel, cobalt, or tungsten carbide can be used. In addition, it is preferable that the inner peripheral grindstone 31 and the outer peripheral grindstone 32 have an average diamond grain size of 4 to 12 μm, and a content of diamond grains in the inner peripheral grindstone 31 and the outer peripheral grindstone 32 of 5 to 95% by volume. It is more preferable that the content of diamond grains be 20 to 90% by volume. This increases cost due to an increase in the process time when the diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range.

As the inner peripheral end face polishing process, a polishing machine 40 as shown in FIG. 4 is used, and the polishing process is carried out on the inner peripheral end face of a central aperture of glass substrate W. That is, the polishing machine 40 has an inner peripheral polishing brush 41, while rotating laminated substrates X on the axis, and the inner peripheral polishing brush 41 inserted in a central aperture of each glass substrate W is rotated in the direction opposite to that of the glass substrates W and moved vertically. At this time, polishing fluid is dropped to the inner peripheral polishing brush 41. Then, the inner peripheral end face of glass substrates W is polished by the inner peripheral polishing brush 41. At the same time, the edge portion of the inner and outer peripheral end face (chamfer surface), which was chamfered in the inner and outer peripheral end face lapping process, is polished. In addition, as the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) or cerium oxide abrasive grain into water can be used.

As the secondary principal surface lapping process, like the primary principal surface lapping process, a lapping machine 10 as shown in FIG. 1 is used, and, the secondary lapping process is carried out on both principal surfaces of glass substrate W. That is, while sandwiching pieces of glass substrates W between a pair of upper and lower faceplates 11 and 12, which are rotating in directions opposite to each other, both sides of these glass substrate W are lapped by a grinding pad installed in the faceplate 11, 12.

The grinding pad used for the secondary lapping process, like the diamond pad 20A as shown in FIGS. 2A and 2B, is a diamond pad 20B to which diamond abrasive grain was fixed with binder (bond). In addition, the lapping surface 20 a has plural tile-like projections having a flat top which are installed in line. In addition, the diamond pad 20B is formed by placing a number of projections 21, which is formed by fixing diamond abrasive grain with binder, on the surface of a substrate material 22.

As the same as the diamond pad 20A shown in FIGS. 2A and 2B, it is preferable that the size S of the projections 21 of the diamond pad 20B used in secondary lapping process be 1.5 to 5 mm square with a height T 0.2 to 3 mm, and the space G between adjacent projections be 0.5 to 3 mm. According to the present invention, by using the diamond pad 20B to satisfy the above range, liquid coolant or lapping fluid can reach everywhere equally, and grinding dust can be discharged smoothly from an space of the projection 21 of the lap surface 20 a.

In addition, it is preferable that the diamond pad 20B used in the secondary lapping process have an average diamond grain size of 1 to 5 μm, and a content of diamond grains in the projection 21 of 5 to 80% by volume. It is more preferable that the content of diamond grains be 50 to 70% by volume. This increases cost due to an increase in the process time when the diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range. In addition, as a binder of diamond pad 20B, for example, polyurethane resin, phenol-based resin, melamine-based resin, acrylic resin, or the like can be used.

As the tertiary principal surface lapping process, like the primary and secondary principal surface lapping processes, the lapping machine 10 as shown in FIG. 1 is used, and the tertiary lapping process is carried out on both principal surfaces of the glass substrate W. In other words, this lapping machine 10 includes a pair of upper and lower faceplates 11 and 12, several sheets of glass substrates sandwiched between the faceplates 11 and 12 which are rotating in directions opposite to each other, and both sides of the glass substrates W are lapped by grinding pads installed in the faceplates 11 and 12.

The same as the diamond pad 20A as shown in FIGS. 2A and 2B, the grinding pad used for the tertiary lapping process is a diamond pad 20C to which diamond abrasive grain was fixed with binder (bond). In addition, the lapping surface 20 a has plural tile-like projections having a flat top which are installed in line. In addition, the diamond pad 20C is formed by placing a number of projections 21, which is formed by fixing diamond abrasive grain with binder, on the surface of a substrate material 22.

The same as the diamond pad 20A shown in FIGS. 2A and 2B, it is preferable that the size S of the projections 21 of the diamond pad 20A used in tertiary lapping process be 1.5 to 5 mm square with a height T 0.2 to 3 mm, and the space G between adjacent projections be 0.5 to 3 mm. According to the present invention, by using the diamond pad 20C to satisfy the above range, liquid coolant or lapping fluid can reach everywhere equally, and grinding dust can be discharged smoothly from an space of the projection 21 of the lap surface 20 a.

In addition, it is preferable that the diamond pad 20A used in the tertiary lapping process have an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection 21 of 5 to 80% by volume. It is more preferable that it have a content of diamond grains of 20 to 70% by volume. This increases cost due to increase the process time when diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range. In addition, as a binder of diamond pad 20C, for example, polyurethane resin, phenol-based resin, melamine-based resin, acrylic resin, or the like can be used.

As the outer peripheral end face polishing process, a polishing machine 50 as shown in FIG. 5 is used, and the polishing process is carried out on the outer peripheral end face of the glass substrate W. The polishing machine 50 has a rotating shaft 51 and outer peripheral polishing brush 52. The laminated substrates X is obtained by laminating pieces of glass substrates W in the state that the central apertures match each other wherein spacers S are sandwiched. While rotating laminated substrates X on the axis by the rotating shaft 51 inserted in a central aperture of each glass substrate W, the outer peripheral polishing brush 52 in contact with the surface of the outer peripheral end face of the glass substrates, is rotated in the direction opposite to that of the glass substrates W and moved vertically. At this time, polishing fluid is dropped to the outer peripheral polishing brush 51. Then, the outer peripheral end face of glass substrates W is polished by the outer peripheral polishing brush 51. At the same time, the edge portion of the inner and outer peripheral end face, which was chamfered in the inner and outer peripheral end face lapping process, is polished. In addition, as the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) or cerium oxide abrasive grain into water can be used.

In the principal surface etching process, the glass substrate W is dipped in etching solution, and etching is performed for both principal surfaces of the glass substrate W. The etching treatment complements the chemical polishing process by CMP with the use of the conventional cerium oxide slurry; as a result, microcracks produced in both principal surfaces of the glass substrate W are removed.

Moreover, in the principal surface etching process, although drawing is omitted, the etching process for both principal surfaces of pieces of the glass substrates W is carried out by inserting a support rod into a central aperture of the glass substrates W, and dipping the pieces of the glass substrates W, which are hung with this support rod, into the etching solution which is pooled in an etching bath.

By this etching, etching solution fills the microcracks generated on principal surfaces of the glass substrate W by the lapping process. Then, the heads of the microcracks is etched to a round-bottom shape. As a result, even if stress is applied to these portions of the microcracks, it is possible to prevent the cracks from further developing. In addition, microcracks with a shallow depth are removed by etching. As a result, the glass substrate W in which microcracks are removed, has improved mechanical strength (impact strength), and the impact strength of the magnetic recording media having the glass substrate W may be improved.

As mentioned above, the etching process is carried out by dipping the glass substrate W into the etching solution; however, it is not limited to etching by the dipping step. For example, an etching process may be carried out by applying the etching solution on a principal surfaces of the glass substrate W.

As the etching solution, which can etch the glass substrate W, the fluorinated acid based etching solution containing, for example, fluorinated acid (HF) or hexafluorosilicic acid (H₂SiF₆) as a main component, can be used. It is preferable to use fluorinated acid solution. In addition, etching force and etching characteristics can be adjusted by adding inorganic acids such a sulfuric acid, a nitric acid, HCl in such fluorinated acid based etching solution. In addition, the concentration of the fluorinated acid base etching solution is not limited as long as the microcracks produced in both principal surfaces of the glass substrate W can be removed, and no excess-etching or damage to the surfaces occur. In particular, for example, the etching solution can be used in the range of 0.01-10 mass %.

Although conditions of dipping the glass substrate W is dependent on the type and concentration of the etching solution, it is preferable to set the temperature of the etching solution in a range of 15-65° C., and the etching (dipping) time in the range of 0.5-30 minutes. For example, a condition with temperature of etching solution of 30° C. and dipping time of 15 minutes in the etching solution containing fluorinated acid 0.5 mass %, or another condition with temperature of etching solution of 30° C. and dipping time of 10 minutes in the etching solution containing fluorinated acid of 1.5 mass % and sulfuric acid of 0.5 mass % can be used. In addition, in the principal surface etching process, the entire surface of a glass substrate W may be etched, or only a principal surface may be etched partially. In addition, it is preferable to clean the glass substrate W after the etching step in order to remove the etching solution remaining on the glass substrate W.

As principal surface polishing process, polishing machine 60 as shown in FIG. 6 is used, and principal surface polishing process is carried out on both principal surfaces of the glass substrate W. That is, while sandwiching pieces of glass substrates W between a pair of upper and lower faceplates 61 and 62, which are rotating in directions opposite to each other, both sides of these glass substrates W are polished by the grinding pad installed in the faceplates 61 and 62.

The grinding pad used for the polishing process is a hard polishing cloth made of urethane, for example. When the polishing process is carried out on the both principal surface of the glass substrate W, polishing fluid is dropped to the glass substrates W. As the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) abrasive grain into water can be used.

In addition, the glass substrate W subjected to the lapping and polishing process is fed to the cleaning process and final inspection process. In the final cleaning process, for example, a chemical cleaning method using cleaner (chemical) combined with an ultrasonic method is used to clean the glass substrate W and remove the abrasive, for example, used in the above step. In addition, with the inspection process, by using laser optical inspection equipment, for example, examination of the presence or absence of distortion or scratches on the surface (principal surfaces, end face and chamfer surface) of the glass substrate W can be performed.

As the method of manufacturing a glass substrate for magnetic recording media according to the present invention, diamond pads 20A, 20B, 20C to which diamond abrasive grains as shown in FIGS. 2A and 2B were fixed to with binder in the primary, secondary and tertiary lapping process are used. Therefore, both principal surfaces of the glass substrate W can be formed smoothly in a short amount of time, while grinding debris are removed smoothly from an space of projections 21 of lapping surface 20 a. In addition, application of expensive cerium oxide abrasive grain can be reduced by changing the conventional two-step process (the primary and secondary polishing processing) to a one-step process of principal polishing process of the present invention. In addition, since polishing processing has longer processing time than lapping processing, it is possible to cut processing time. According to the present invention, glass substrates for magnetic recording media with high productivity, wherein the manufactured substrate has high surface smoothness, little waviness and excellent impact strength, can be produced.

In addition, according to the present invention, the microcracks produced on both surfaces of glass substrate W are removed by the principal surface etching process which is provided between the principal surface lapping process and principal surface polishing process. As a result, the mechanical strength (impact strength) of the glass substrate W can be improved.

Example of the Second Embodiment

As an example of a second embodiment, primary principal surface lapping process, inner and outer peripheral end face lapping process, inner peripheral end face polishing process, secondary principal surface lapping process, outer peripheral end face polishing process, principal surface etching process and principal surface polishing process are performed in this order.

As the primary principal surface lapping process, the lapping machine 10 as shown in FIG. 1 is used, and a primary lapping process is carried out on the both principal surfaces of the glass substrate W. In other words, this lapping machine 10 includes a pair of upper and lower faceplates 11 and 12, several sheets of glass substrates sandwiched between the faceplates 11 and 12 which are rotating in directions opposite to each other, both sides of the glass substrates W are lapped by grinding pads installed in the faceplates 11 and 12.

The grinding pad used for the primary lapping process, the same as the diamond pad 20A as shown in FIGS. 2A and 2B, is a diamond pad 20D to which diamond abrasive grain was fixed with binder (bond). In addition, the lapping surface 20 a has plural tile-like projections having a flat top which are installed in line. In addition, the diamond pad 20D is formed by placing a number of projections 21, which is formed by fixing diamond abrasive grain with binder, on the surface of a substrate material 22.

It is preferable that the size S of the projections 21 of the diamond pad 20D used in primary lapping process be 1.5 to 5 mm square with a height T 0.2 to 3 mm, and the space G between adjacent projections be 0.5 to 3 mm. According to the present invention, by using the diamond pad 20D to satisfy the above range, liquid coolant or lapping fluid can reach everywhere equally, and grinding dust can be discharged smoothly from an space of the projection 21 of the lap surface 20 a.

In addition, it is preferable that the diamond pad 20D used in the primary lapping process have an average diamond grain size of 3 to 10 μm, and a content of diamond grains in the projection 21 of 5 to 70% by volume. It is more preferable that it have a content of diamond grains of 20 to 30% by volume. This increases cost due to increase the process time when diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range. In addition, as a binder of diamond pad 20D, for example, polyurethane resin, phenol-based resin, melamine-based resin, acrylic resin, or the like can be used.

As the inner and outer peripheral end face lapping process, lapping machine 30 as shown in FIG. 3 is used, and lapping process is carried out on inner peripheral end surface of a central aperture of glass substrate W and outer peripheral end face of the glass substrate W. The lapping machine 30 includes the inner peripheral grindstone 31 and outer peripheral grindstone 32. The laminated substrates X is obtained by laminating pieces of glass substrates W in the state that the central apertures match each other wherein spacers S is sandwiched. While rotating the laminated substrates X on axis, and inserting the inner peripheral grindstone 31 into a central aperture of glass substrates and putting glass substrates W in a radial direction between the outer peripheral grindstone 32 which is placed on the periphery of each glass substrate W, the inner peripheral grindstone 31 and outer peripheral grindstone 32 are rotated in the direction opposite to that of laminated substrates X. At the same time as grinding the inner peripheral end face of the glass substrates W by the inner peripheral grindstone 31, the outer peripheral end face of the glass substrates W is lapped by peripheral grindstone 32.

In addition, since there are waveforms having a projection and recess line alternately in an axial direction on the surface of the inner peripheral grindstone 31 and the outer peripheral grindstone 32, in addition to grinding inner peripheral end face and the outer peripheral end face of glass substrates W, it is possible to chamfer the edge portion between the two principal surfaces and inner and outer peripheral end face of glass substrates W. The lapping process for inner and outer peripheral end face may be carried out in one step or two steps (primary or secondary lapping process).

The inner peripheral grindstone 31 and the outer peripheral grindstone 32 are obtained by fixing diamond abrasive grain with binder. As the binder, metal such as copper, copper alloy, nickel, cobalt, tungsten carbide can be used. In addition, it is preferable that the inner peripheral grindstone 31 and the outer peripheral grindstone 32 have an average diamond grain size of 4 to 12 μm, and a content of diamond grains in the inner peripheral grindstone 31 and the outer peripheral grindstone 32 of 5 to 95% by volume. It is more preferable that the content of diamond grains be 20 to 90% by volume. This increases cost due to an increase in the process time when the diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range.

As the inner peripheral end face polishing process, using the polishing machine 40 as shown in FIG. 4, and the polishing process is carried out on the inner peripheral end face of a central aperture of the glass substrate W. That is, the polishing machine 40 has an inner peripheral polishing brush 41, while rotating laminated substrates X on axis, and the inner peripheral polishing brush 41 inserted in a central aperture of each glass substrate W is rotated in the direction opposite to that of the glass substrates W and moved vertically. At this time, polishing fluid is dropped to inner peripheral polishing brush 41. Then, the inner peripheral end face of glass substrates W is polished by the inner peripheral polishing brush 41. At the same time, the edge portion of the inner and outer peripheral end face, which was chamfered in the inner and outer peripheral end face lapping process, is polished. In addition, as the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) or cerium oxide abrasive grain into water can be used.

As the secondary principal surface lapping process, like the primary principal surface lapping process, the lapping machine 10 as shown in FIG. 1 is used, and, the secondary lapping process is carried out on both principal surfaces of the glass substrate W. That is, while sandwiching pieces of glass substrates W between a pair of upper and lower faceplates 11 and 12, which are rotating in directions opposite to each other, both sides of these glass substrate W are lapped by grinding pad installed in the faceplate 11, 12.

The grinding pad used for the secondary lapping process, like the diamond pad 20A as shown in FIGS. 2A and 2B, is a diamond pad 20E to which diamond abrasive grain was fixed with binder (bond). In addition, the lapping surface 20 a has plural tile-like projections having a flat top which are installed in line.

The same as the diamond pad 20A as shown in FIGS. 2A and 2B, it is preferable that the size S of the projections 21 of the diamond pad 20E used in the secondary lapping process be 1.5 to 5 mm square with a height T 0.2 to 3 mm, and the space G between adjacent projections be 0.5 to 3 mm. According to the present invention, by using the diamond pad 20E to satisfy the above range, liquid coolant or lapping fluid can reach everywhere equally, and grinding dust can be discharged smoothly from an space of the projection 21 of the lap surface 20 a.

In addition, it is preferable that the diamond pad 20E used in the secondary lapping process have an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection 21 of 5 to 80% by volume. It is more preferable that it have a content of diamond grains of 20 to 70% by volume. This increases cost due to an increase in the process time when diamond abrasive grain size and content are less than the above range. On the other hand, it becomes more difficult to obtain desired surface roughness when the diamond abrasive grain size and content exceed the above range. In addition, as a binder of diamond pad 20E, for example, polyurethane resin, phenol-based resin, melamine-based resin, acrylic resin, and the like can be used.

As the outer peripheral end face polishing process, using the polishing machine 50 as shown in FIG. 5, the polishing process is carried out on the outer peripheral end face of glass substrate W. The polishing machine 50 has a rotating shaft 51 and outer peripheral polishing brush 52. The laminated substrates X is obtained by laminating pieces of glass substrates W in the state that the central apertures match each other wherein spacers S are sandwiched. While rotating laminated substrates X on the axis by the rotating shaft 51 inserted in a central aperture of each glass substrate W, the outer peripheral polishing brush 52 in contact with the surface of the outer peripheral end face of the glass substrates, is rotated in the direction opposite to that of the glass substrates W and moved vertically. At this time, polishing fluid is dropped onto an outer peripheral polishing brush 51. Then, the outer peripheral end face of the glass substrates W is polished by the outer peripheral polishing brush 51. At the same time, the edge portion of the inner and outer peripheral end face, which was chamfered in the inner and outer peripheral end face lapping process, is polished. In addition, as the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) or cerium oxide abrasive grain into water can be used.

In the principal surface etching process, the glass substrate W is dipped in etching solution, and etching is performed for both principal surfaces of the glass substrate W. The etching treatment complements the chemical polishing process by CMP with the use of the conventional cerium oxide slurry; as a result, microcracks produced in both principal surfaces of the glass substrate W are removed.

Moreover, in the principal surface etching process, although drawing is omitted, the etching process for both principal surfaces of pieces of the glass substrates W is carried out by inserting a support rod into a central aperture of the glass substrates W, and dipping the pieces of the glass substrates W, which are hung with this support rod, into the etching solution which is pooled in an etching bath.

By this etching, etching solution fills the microcracks generated on principal surfaces of the glass substrate W by the lapping process. Then, the heads of the microcracks is etched to a round-bottom shape. As a result, even if stress is applied to these portions of the microcracks, it is possible to prevent the cracks from further developing. In addition, microcracks with a shallow depth are removed by etching. As a result, the glass substrate W in which microcracks are removed, has improved mechanical strength (impact strength), and the impact strength of the magnetic recording media having the glass substrate W may be improved.

As mentioned above, the etching process is carried out by dipping the glass substrate W into the etching solution; however, it is not limited to etching by the dipping step. For example, an etching process may be carried out by applying the etching solution on a principal surfaces of the glass substrate W.

As the etching solution, which can etch the glass substrate W, the fluorinated acid based etching solution containing, for example, fluorinated acid (HF) or hexafluorosilicic acid (H₂SiF₆) as a main component, can be used. It is preferable to use fluorinated acid solution. In addition, etching force and etching characteristics can be adjusted by adding inorganic acids such a sulfuric acid, a nitric acid, HCl in such fluorinated acid based etching solution. In addition, the concentration of the fluorinated acid base etching solution is not limited as long as the microcracks produced in both principal surfaces of the glass substrate W can be removed, and no excess-etching or damage to the surfaces occur. In particular, for example, the etching solution can be used in the range of 0.01-10 mass %.

Although conditions of dipping the glass substrate W is dependent on the type and concentration of the etching solution, it is preferable to set the temperature of the etching solution in a range of 15-65° C., and the etching (dipping) time in the range of 0.5-30 minutes. For example, a condition with temperature of etching solution of 30° C. and dipping time of 15 minutes in the etching solution containing fluorinated acid 0.5 mass %, or another condition with temperature of etching solution of 30° C. and dipping time of 10 minutes in the etching solution containing fluorinated acid of 1.5 mass % and sulfuric acid of 0.5 mass % can be used. In addition, in the principal surface etching process, the entire surface of a glass substrate W may be etched, or only a principal surface may be etched partially. In addition, it is preferable to clean the glass substrate W after the etching step in order to remove the etching solution remaining on the glass substrate W.

As the principal surface polishing process, the polishing machine 60 as shown in FIG. 6 is used, and the principal surface polishing process is carried out on the both principal surfaces of the glass substrate' W. That is, while sandwiching pieces of glass substrates W between a pair of upper and lower faceplates 61, 62, which are rotating in directions opposite to each other, both sides of these glass substrates W are polished by the grinding pad installed in the faceplates 61, 62.

The grinding pad used for the principal surface polishing process is a hard polishing cloth made of urethane, for example. When the polishing process is carried out on the both principal surfaces of the glass substrate W, polishing fluid is dropped onto the glass substrates W. As the polishing fluid, for example, the slurried fluid obtained by dispersing silicon oxide (colloidal silica) abrasive grain into water can be used.

In addition, the glass substrate W subjected to the lapping and polishing process is fed to the cleaning process and the final inspection process. In the final cleaning process, for example, a chemical cleaning method using cleaner (chemical) combined with an ultrasonic method is used to clean the glass substrate W and remove the abrasive, for example, used in the above step. In addition, the inspection process, by using laser optical inspection equipment, for example, examination of the presence or absence of distortion or scratches on the surface (principal surfaces, end face and chamfer surface) of the glass substrate W.

As the method of manufacturing a glass substrate for magnetic recording media according to the present invention, diamond pads 20D, 20E to which diamond abrasive grain as shown in FIGS. 2A and 2B were fixed to with binder in the primary and secondary lapping process are used. Therefore, both principal surfaces of the glass substrate W can be formed smoothly in a short amount of time, while grinding debris are removed smoothly from an space of projections 21 of lapping surface 20 a. In addition, application of expensive cerium oxide abrasive grain can be reduced by changing the conventional two-step process (the primary and secondary polishing processing) to a one-step process of principal polishing process of the present invention. In addition, since polishing processing has longer processing time than lapping processing, it is possible to cut processing time. According to the present invention, glass substrates for magnetic recording media with high productivity, wherein the manufactured substrate has high surface smoothness, little waviness and excellent impact strength, can be produced.

In addition, according to the present invention, the microcracks produced on both surfaces of glass substrate W are removed by the principal surface etching process which is provided between the principal surface lapping process and principal surface polishing process. As a result, the mechanical strength (impact strength) of the glass substrate W can be improved.

According to the present invention, as a lapping fluid used in each lapping process of the first and second embodiments, a commercial source can be used. Lapping fluid, by classifying roughly, includes water-based lapping fluid and oil-based lapping fluid. The water-based lapping fluid contains pure water and a suitable amount of alcohol with addition of polyethylene glycol as a viscosity modifier, amine, surfactant, or the like. On the other hand, the oil-based lapping fluid contains oil with addition of an appropriate amount of stearic acid as an extreme pressure additive. For example, as commercial lapping fluid, water-based Sabrelube 9016 (manufactured by Chemetall), COOLANT D3 (manufactured by Neos) can be used.

In addition, according to the present invention, polishing auxiliaries and anticorrosive may be added to the lapping fluids used in each lapping process and polishing fluids used in polishing process in the first and the second embodiments.

Specifically, polishing auxiliaries include an organic polymer having at least a sulfonate group or a carboxylic acid group. An organic polymer containing sodium sulphonate or sodium carboxylate, having average molecular weight of 4000-10000, is preferable. Thus, it is possible to smooth surfaces (principal surfaces, end face, and chamfer surface) of the glass substrate W in the above processes.

As an organic polymer containing a carboxylic acid or sodium sulfonate, for example, GEROPON SC/213 (Product Name/Rhodia), GEROPON T/36 (Product Name/Rhodia), GEROPON TA/10 (Product Name/Rhodia), GEROPON TA/72 (Product Name/Rhodia), New Karugen WG-5 (Product Name/Takemoto Oil & Fat Corporation), Agurizoru G-200 (Product Name/Kao Corporation), Demoru EP Powder (Product Name/Kao Corporation), Demoru RNL (Product Name/Kao Corporation), Isoban 600-SF35 (Product name/Kuraray Ltd.), Polystar OM (Product Name/NOF Corporation), Sokalan CP9 (Product Name/BASF Japan (Ltd.)), Sokalan PA-15 (Product Name/BA SF Japan Ltd.), Tokisanon GR-31A (Product Name/Sanyo Chemical Industries, Corporation), 7248 Sorpol (Product Name/Toho Chemical Industries, Ltd.), Sharoru AN-103P (Product Name/Dai-ichi Kogyo Seiyaku Co., Ltd. Corporation), Aron T-40 (Product Name/Toagosei Chemical Industry Co., Ltd.), Panakayaku CP (product Name/Nippon Kayaku Inc.), roll disk H12C (Product Name/Nippon Nyukazai Co., Ltd.) can be used. As the polishing auxiliaries, Demoru RNL (Product Name/Kao Corporation) and Polystar OM (Product Name/NOF Corporation) is preferably used.

In addition, the magnetic recording media manufactured using the glass substrate W generally includes corrosion-prone material such as Co, Ni and Fe in magnetic layer. Thus, by adding a corrosion inhibitor in the lapping and polishing solution described above, it is possible to prevent the magnetic layer from corrosion and to obtain a magnetic recording medium excellent in electromagnetic conversion characteristics.

As a corrosion inhibitor, it is preferable to use benzotriazole or a derivative thereof. As derivatives -of benzotriazole, for example, the compound obtained by substituting one, or more hydrogen atoms of benzotriazole by a carboxyl group, a methyl group, an amino group, or a hydroxyl group. In addition, as derivatives of benzotriazole, 4-carboxy benzotriazole or a salt thereof, 7-carboxymethyl benzotriazole or a salt thereof, benzotriazole butyl ester, 1-hydroxymethyl benzotriazole, 1 hydroxybenzotriazole, or the like can be used. It is preferable to use less than 1% by mass of the addition amount of a corrosion inhibitor with respect to the total amount of diamond slurry during using, and it is more preferable to use s0.001% to 0.1% by mass.

In addition, the present invention is not intended to be limited to those of the embodiments. It is possible to make changes in various ways without departing from the spirit of the invention.

For example, regarding the lapping machine used in each lapping process and polishing machine used in polishing process of the first and second embodiments, it is possible that the polishing or lapping machine include a pair of lower faceplate 71 and upper faceplate 72 and plural carriers 73 which, for example, were placed at the surface of lower faceplate 71 which is opposed to the faceplate 72 as shown in FIG. 7. Glass substrates (not shown) are placed into a number of openings 74 (for example, 35 in the present embodiment) installed in each carrier 73, and then the glass substrates are lapped by lapping pad or polished by polishing pad which are installed in the lower faceplate 71 and upper faceplate 72.

Specifically, the lower faceplate 71 and upper faceplate 72 can be rotated at the same central axis and in directions opposite to each other with the rotation movement of the rotation shafts 71 a and 72 a which are rotated by drive motor (not shown), wherein the rotation shafts 71a and 72 a are placed at the center of the lower faceplate 71 and upper faceplate 72. Also, a recess 75 for placing the plurality of carriers 73 (for example, five in this embodiment) is provided on the surface of lower faceplate 71 wherein the surface is facing upper faceplate 72.

As a plural carrier 73, for example, it can be obtained by forming a disk made from epoxy resin which is strengthened by mixing aramid fiber and fiberglass. These plural carriers 73 are placed on the axis 71a in the inner wall of recess 75. In addition, a planet gears part 76 is installed in the periphery of each carrier 73 over the entire circumference. Meanwhile, in the inner periphery of the recess 75, a sun gear portion 77 which rotates with the rotation shaft 71 a while being intermeshed with the planetary gear carrier 76 of each 73 is provided. In the periphery of the recess 75, the fixed gear portion 78 which is intermeshed with planetary gear 76 of each carrier 73 is provided.

When the sun gear portion 77 rotates with the rotating shaft 71a, since the sun gear portion 77 and the fixed gear portion 78 are intermeshed with the planetary gear 76, these plural carriers 73 move (revolution) in the same direction as that of rotation shaft 71 a around the periphery of the rotation shaft 71 a in a recess 75. At the same time, each of these plural carriers 73 rotates (rotation) in the direction opposite to that of rotation shaft 71 a around each central axis. The above motion is so-called planetary motion.

Therefore, when the above configuration is adopted by the lapping machine used in each lapping process, the plural glass substrates held at the opening 75 of each carrier 73 can be lapped by the lapping pad or polished by the polishing pad placed at the lower faceplate 71 and upper faceplate 72 while being moved as planetary motion. In the case of this configuration, the glass substrate can be lapped or polished not only more accurately, but also quickly.

EXAMPLE

The effects of the present invention become clear by the following Examples. It is apparent that the present invention is not limited to the Examples, but may be modified and changed without departing from the scope and spirit of the invention.

Example 1

In Example 1, firstly, a glass substrate (manufactured by Ohara, TS-10SX) having an outside diameter of 48 mm, a center hole of 12 mm, and a thickness of 0.560 mm was used.

Also, for the glass substrate, the primary principal surface lapping process, the inner and outer peripheral end face lapping process, the inner peripheral end face polishing process, the secondary principal surface lapping process, the tertiary principal surface lapping process, the outer peripheral end face polishing process, the principal surface etching process and the principal surface polishing process were performed in this order.

In detail, the primary principal surface lapping process was carried out by using a lapping machine including a pair of upper and lower faceplates. While several sheets of glass substrates were sandwiched between the faceplates which were rotating in directions opposite to each other, both sides of the glass substrates were lapped by lapping pads installed in the faceplates. At this time, Traizact (Product Name/Manufactured by Sumitomo 3M) was used as the lapping pad of the primary lapping process. The size of the projections of the lapping pad was 2.6 mm² with a height of 2 mm, and the space between adjacent projections was 1 mm, the average particle size of the diamond grains was 9 μm, and the a content of diamond grains in the projection was 20%. As the lapping machine, a four-way double-sided lapping machine (16B, manufactured by Hamai Co., Ltd) was used. The lapping process was carried out for 15 minutes, under the condition that rotational speed of the faceplate was 25 rpm, and the processing pressure was 120 g/cm². As a lapping fluid, COOLANT D3 (manufactured by Neos) was used after diluted at a ratio of 1:10 in water, and the lapping amount per side of the glass substrate was about 100 μm.

In the inner and outer peripheral end face lapping process, the lapping machine including the inner peripheral grindstone and the outer peripheral grindstone was used. The laminated substrates were obtained by laminating pieces of glass substrates in the state that the central apertures match each other wherein spacers are sandwiched. While rotating the laminated substrates on the axis, and inserting inner peripheral grindstone into a central aperture of glass substrates and putting glass substrates in a radial direction between outer peripheral grindstones which is placed on the periphery of each glass substrate, the inner peripheral grindstone and outer peripheral grindstone were rotated in the direction opposite to that of laminated substrates. At the same time as grinding inner peripheral end face of the glass substrates by the inner peripheral grindstone, outer peripheral end face of the glass substrates was lapped by the peripheral grindstone. The inner peripheral grindstone and the outer peripheral grindstone used diamond grains with an average particle size of 10 μm. The rotation speed of the inner peripheral grindstone and outer peripheral grindstone was 1200 rpm and 600 rpm, respectively, and processing was carried out for 30 seconds.

As the inner peripheral end face polishing process, using a polishing machine having an inner peripheral polishing brush, while laminated substrates are rotated on the axis, and the inner peripheral polishing brush inserted in a central aperture of each glass substrate was rotated in the direction opposite to that of the glass substrates and moved vertically, at the same time polishing fluid was dropped onto inner peripheral polishing brush, the inner peripheral end face of glass substrates was polished by the inner peripheral polishing brush. In this case, a nylon brush was used as the inner peripheral polishing brush. The rotation speed of the inner peripheral polishing brush was 300 rpm, and processing was carried out for 10 minutes.

The secondary principal surface lapping process was carried out by using a lapping machine including a pair of upper and lower faceplates. While several sheets of glass substrates was sandwiched between the faceplates which were rotating in directions opposite to each other, both sides of the glass substrates were lapped by lapping pads installed in the faceplates. At this time, Traizact (Product Name) manufactured by Sumitomo 3M was used as the lapping pad of the secondary lapping process. The size of the projections 21 of the lapping pad was 2.6 mm square with a height of 2 mm, and the space between adjacent projections was 1 mm. The average particle size of the diamond grains was 3 μm, and the a content of diamond grains in the projection was 50%. As the lapping machine, a four-way double-sided lapping machine (16B, manufactured by Hamai Co., Ltd) was used. The lapping process was carried out for 10 minutes, under the condition that rotational speed of the faceplate was 25 rpm, and the processing pressure was 120 g/cm². As a lapping fluid, COOLANT D3 (manufactured by Neos) was used after diluted at a ratio of 1:10 in water, and the lapping amount per side of the glass substrate was about 30 μm.

The tertiary principal surface lapping process was carried out by using a lapping machine including a pair of upper and lower faceplates. While several sheets of glass substrates was sandwiched between the faceplates which were rotating in directions opposite to each other, both sides of the glass substrates were lapped by lapping pads installed in the faceplates. At this time, a diamond pad (Traizact (Product Name) manufactured by Sumitomo 3M) was used as the lapping pad of the primary lapping process. The size of the projections 21 of the lapping pad was 2.6 mm square with a height of 2 mm, and the space between adjacent projections was 1 mm. And the average particle size of the diamond grains was 0.5 μm, and the content of the diamond grains in the projection was 60%. As the lapping machine, a four-way double-sided lapping machine (16B, manufactured by Hamai Co., Ltd) was used. The lapping process was carried out for 10 minutes, under the condition that rotational speed of the faceplate was 25 rpm, and the processing pressure was 120 g/cm². As a lapping fluid, COOLANT D3 (manufactured by Neos) was used after diluted at a ratio of 1:10 in water, and the lapping amount per side of the glass substrate was about 10 μm.

In the outer peripheral end face polishing process, a polishing machine having an outer peripheral polishing brush was used. The laminated substrates were obtained by laminating pieces of glass substrates in the state that the central apertures match each other wherein spacers were sandwiched. While rotating laminated substrates on the axis by the rotating shaft inserted in a central aperture of each glass substrate, the outer peripheral polishing brush in contact with the surface of the outer peripheral end face of the glass substrates was rotated in the direction opposite to that of the glass substrates and moved vertically. At the same time polishing fluid was dropped onto the outer peripheral polishing brush, and the outer peripheral end face of glass substrates was polished by the outer peripheral polishing brush. In this case, a nylon brush was used as the outer peripheral polishing brush. The rotation speed of outer peripheral polishing brush was 300 rpm, and processing was carried out for 10 minutes.

In the principal surface etching process, the glass substrate W was dipped in etching solution, and etching was performed on both principal surfaces of the glass substrate W. Fluorinated acid aqueous solution of 0.5 mass % was used as the etching solution, the liquid temperature was 30° C., and the dipping time was two minutes. The etching process was carried out by hanging a support rod having a diameter of 9 mm, which was made of PEEK material and had 25 grooves having a width of 1.4 mm wherein the grooves were installed in an space of 6.35 mm, and then dipping each of the glass substrates into the etching solution which was pooled in an etching bath while rotating the support rod at a rotational speed of 2 rounds per minute. After etching, cleaning the substrate was carried out by using pure water.

In the principal surface polishing process, the polishing machine including a pair of upper and lower faceplates was used. While sandwiching pieces of glass substrates between a pair of upper and lower faceplates, which were rotating in directions opposite to each other, both sides of these glass substrate were polished by a polishing pad installed in the faceplates. In this case, as the primary polishing pad, Suede type (manufactured by Filwel) was used. The polishing fluid was polishing slurry having silica content was 0.5 wt % by adding water to a silica abrasive polishing fluid having 40 wt % silica as solids content (0.08 μm average particle size, Compol, manufactured by Fujimi). As the polishing machine, a four-way double-sided polishing machine (16B, manufactured by Hamai Co., Ltd) was used. The polishing process was carried out for 30 minutes, under the condition that the rotational speed of the faceplate was 25 rpm, the processing pressure was 110 g/cm², while the polishing liquid was supplied in a rate of 7 L/minutes. The polishing amount per side of the glass substrate was about 2 μm.

The glass substrates obtained after the above processes were treated using chemical cleaning by the anionic surfactant combined with ultrasound treatment, and treated using pure water cleaning. As a result, the glass substrates for magnetic recording media of Example 1 were obtained.

Example 2

In Example 2, the tertiary principal surface lapping process was omitted and the primary and secondary lapping processes of the glass substrates in Example 1 were set to two steps. As the lapping pad used in the primary lapping process, a diamond pad (Traizact, Product Name, Manufactured by Sumitomo 3M) was used. The size of the projections of the diamond pad was 2.6 mm² with a height of 2 mm. The space between adjacent projections was 1 mm, the average particle size of the diamond grains was 4 μm, a content of diamond grains in the projection was 50%. As the lapping machine, a four-way double-sided lapping machine (16B, manufactured by Hamai Co., Ltd) was used. The lapping process was carried out for 10 minutes, under the condition that rotational speed of the faceplate was 25 rpm, and the processing pressure was 120 g/cm². As a lapping fluid, COOLANT D3 (manufactured by Neos) was used after diluted at a ratio of 1:10 in water, and the lapping amount per side of the glass substrate was about 30 μm. Others were carried out the same as in Example 1 for producing glass substrates for a magnetic recording media.

Comparative Example 1

In Comparative Example 1, except that the principal surface etching process was not carried out, glass substrates for magnetic recording media were produced by the same process as in Example 1.

Comparative Example 2

In Comparative Example 2, except that the principal surface etching process was not carried out, glass substrates for magnetic recording media were produced by the same process as in Example 2.

Then, the surface roughness Ra and micro-waviness Wa of the glass substrates obtained in Examples 1 and 2, and Comparative Examples 1 and 2 were measured. As the method for measurement of surface roughness Ra and micro-waviness Wa, Atomic Force Microscope (D3000 Manufactured by Digital Instruments) was used.

As a result, the surface roughness Ra of glass substrates for the magnetic recording medium of Example 1 was 0.28 nm, micro-waviness Wa was 0.20 nm, and surface roughness Ra of glass substrates for magnetic recording medium of Example 2 was 0.31 nm, micro-waviness Wa was 0.24 nm. However, the surface roughness Ra of glass substrates for the magnetic recording medium of Comparative Example 1 was 0.33 nm, the micro-waviness Wa was 0.25 nm, and the surface roughness Ra of the glass substrates for the magnetic recording medium of Comparative Example 2 was 0.34 nm, and the micro-waviness Wa was 0.26 nm. Therefore, in Examples 1 and 2, a glass substrate (glass substrate for magnetic recording media) having high surface smoothness and little waviness can be manufactured, in comparison with Comparative Examples 1 and 2.

In addition, the impact strength of the glass substrates for magnetic recording media obtained in Examples 1 and 2 and Comparative Examples 1 and 2 was evaluated. The evaluation of the impact strength was carried out by chucking each of the glass substrates for magnetic recording media to a spindle motor, rotating it for 10 minutes while repeating acceleration and deceleration of the rotational speed in the range of 0 to 15000 rpm, and then examining a damage rate of each of the glass substrates. As a result, the damage rate of the glass substrate of Example 1 was 3%, the damage rate of the glass substrate of Example 2 was 5%, the damage rate of the glass substrate of Comparative Example 1 was 19%, and the damage rate of the glass substrate of Comparative Example 2 was 22%.

DENOTATION OF REFERENCE NUMERALS

-   10 . . . lapping machine -   11,12 . . . faceplate -   20A, 20B . . . diamond pad -   20 a . . . lap surface -   21 . . . projection -   22 . . . substrate material -   30 . . . lapping machine -   31 . . . inner peripheral grindstone -   32 . . . outer peripheral grindstone -   40 . . . polishing machine -   41 . . . inner peripheral polishing brush -   50 . . . polishing machine -   51 . . . rotating shaft -   52 . . . outer peripheral polishing brush -   60 . . . polishing machine -   61, 62 . . . faceplate -   71 . . . bottom faceplate -   72 . . . upper faceplate -   73 . . . carrier -   74 . . . opening -   75 . . . recess -   76 . . . planet gears part -   77 . . . sun gears part -   78 . . . fixed gear part -   W . . . glass substrate -   X . . . laminated substrates -   S . . . spacer 

1. A method of manufacturing a glass substrate for magnetic recording media, comprising: a primary lapping process, a secondary lapping process, a tertiary lapping process, and a polishing process, which are carried out on a surface except for an end face of a glass substrate in this order; in the primary, secondary and tertiary lapping process, a diamond pad on which diamond abrasive grain was fixed using binder was used, and the surface of the diamond pad has a structure in which plural tile-like projections having a flat top were provided in line; wherein the diamond pad used in the primary lapping process has an average diamond grain size of 4 to 12 μm, and a content of diamond grains in the projection of 5 to 70% by volume, the diamond pad used in the secondary lapping process has an average diamond grain size of 1 to 5 μm, and a content of diamond grains in the projection of 5 to 80% by volume, the diamond pad used in the tertiary lapping process has an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection of 5 to 80% by volume, in the polishing process, silicon oxide is used as abrasive, and a process of carrying out etching treatment is provided before the polishing process.
 2. The method of manufacturing a glass substrate for magnetic recording media according to claim 1, wherein the size of the projections of the diamond pad used in primary, secondary and tertiary lapping process, is 1.5 to 5 mm square with a height 0.2 to 3 mm, and the space between adjacent projections is 0.5 to 3 mm.
 3. A method of manufacturing a glass substrate for magnetic recording media, comprising: a primary lapping process, a secondary lapping process, and a polishing process, which are carried out on a surface except for an end face of a glass substrate in this order; in the primary and secondary lapping process, the diamond pad on which diamond abrasive grain was fixed using binder is used, and the surface of the diamond pad has a structure in which plural tile-like projections having a flat top were provided in line; wherein the diamond pad used in the primary lapping process has an average diamond grain size of 3 to 10 μm, and a content of diamond grains in the projection of 5 to 70% by volume, the diamond pad used in the secondary lapping process has an average diamond grain size of 0.2 to 2 μm, and a content of diamond grains in the projection of 5 to 80% by volume, in the polishing process, the silicon oxide is used as abrasive, and a process of carrying out etching treatment is provided before the polishing process.
 4. The method of manufacturing a glass substrate for magnetic recording media according to claim 3, wherein the size of the projections of the diamond pad used in primary, secondary and tertiary lapping process, is 1.5 to 5 mm square with a height 0.2 to 3 mm, and the space between adjacent projections is 0.5 to 3 mm.
 5. The method of manufacturing a glass substrate for magnetic recording media according to claim 1, wherein in the polishing process, silicon oxide is used as abrasive without using cerium oxide.
 6. The method of manufacturing a glass substrate for magnetic recording media according to claim 1, wherein the etching treatment was carried out by dipping the glass substrate in an etching solution. 